金属/SiOx 界面におけるアモルファス相形成 の履歴(No.3)

電子照射-電子励起による相転移

金属/シリコン酸化物界面におけるアモルファス形成†

REFERENCES

  1. T. Nagase, R. Yamashita, A. Yabuuchi, J.-G. Lee, AIP Advances, 5, 117145 1-7 (2015), "An amorphous phase formation at palladium / silicon oxide (Pd/SiOx) interface through electron irradiation - electronic excitation process", http://dx.doi.org/10.1063/1.4936629
  2. T. Nagase, R. Yamashita, J.-G. Lee, Journal of Applied Physics, 119, 165103 1-9 (2016)., "Electron irradiation induced crystallization at metallic amorphous / silicon oxide interfaces caused by electronic excitation", http://dx.doi.org/10.1063/1.4947519
  3. T. Nagase, R. Yamashita, J.-G. Lee, AMTC Letters, 5, 198-199 (2016), "In situ observation of the irradiation induced structural change at palladium/silicon oxide (Pd/SiOx) interfaces under electron irradiation focusing on the temperature dependence", http://amtc5.com/
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