Formation of metallic amorphous at metal/SiOx interface の変更点

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Formation of metallic amorphous at metal/SiOx interface へ行く。
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|[[Material modification by electron irradiation - electronic excitation]]|
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*Formation of metallic amorphous at metal/SiOx interface [#o43ac042]


REFERENCES~
+%%%T. Nagase%%%, R. Yamashita, A. Yabuuchi, J.-G. Lee, AIP Advances, 5, 117145 1-7 (2015), "An amorphous phase formation at palladium / silicon oxide (Pd/SiOx?) interface through electron irradiation - electronic excitation process", http://dx.doi.org/10.1063/1.4936629

+%%%T. Nagase%%%, R. Yamashita, J.-G. Lee, Journal of Applied Physics, 119, 165103 1-9 (2016)., "Electron irradiation induced crystallization at metallic amorphous / silicon oxide interfaces caused by electronic excitation", http://dx.doi.org/10.1063/1.4947519
+%%%T. Nagase%%%, R. Yamashita, J.-G. Lee, AMTC Letters, 5, 198-199 (2016), "In situ observation of the irradiation induced structural change at palladium/silicon oxide (Pd/SiOx) interfaces under electron irradiation focusing on the temperature dependence", http://amtc5.com/